Memristor BJT pair based low complex circuits for portable electronics
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
https://link.springer.com/content/pdf/10.1007/s10470-020-01716-8.pdf
Reference55 articles.
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3. Sawa, A. (2008). Resistive switching in transition metal oxides. Materials Today, 11(6), 28–36. https://doi.org/10.1016/S1369-7021(08)70119-6.
4. Kim, H., Sah, M. P., Yang, C., & Chua, L. O. (2010). Memristor-based multilevel memory. In 2010 12th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA 2010) (pp. 1–6). IEEE. https://doi.org/10.1109/CNNA.2010.5430320
5. Zidan, M. A., Fahmy, H. A. H., Hussain, M. M., & Salama, K. N. (2013). Memristor-based memory: The sneak paths problem and solutions. Microelectronics Journal, 44(2), 176–183. https://doi.org/10.1016/j.mejo.2012.10.001.
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1. Memristors as Prospective Devices for Silicon and Post-Silicon Eras: Theory, Applications and Perspectives;Nanoelectronic Devices and Applications;2024-06-26
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