DLTS characterization of proton implantation defects in P-type GaAs by using schottky barrier diodes
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Published:1987-03
Issue:1-4
Volume:103
Page:197-202
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ISSN:0033-7579
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Container-title:Radiation Effects
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language:en
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Short-container-title:Radiation Effects
Author:
Nel M.,Auret F. D.
Publisher
Informa UK Limited
Subject
General Engineering
Cited by
3 articles.
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