Anomalous surface damage in ion bombarded silicon from channelling-backscattering measurements
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578008209153
Reference20 articles.
1. Energy density and time constant of heavy‐ion‐induced elastic‐collision spikes in solids
2. The Displacement of Atoms in Solids by Radiation
3. Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge
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1. Defect accumulation during room temperature N+ irradiation of silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
2. Radiation-induced damage in GaP by MeV Helium ions;Acta Physica Sinica (Overseas Edition);1994-02
3. The effect of incidence angle on disorder production in ion implanted Si;Radiation Effects and Defects in Solids;1989-06
4. Implantation temperature dependence of disorder produced by 40 KeV N+ion irradiation of silicon;Radiation Effects;1984-01
5. Exchange of injected hydrogen isotopes between diffusing and trapped states in Al;Radiation Effects;1984-01
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