The oxidation characteristics of nitrogen-implanted silicon-Reference-Cited by-同舟云学术

The oxidation characteristics of nitrogen-implanted silicon

Published:1980-01 Issue:1-4 Volume:47 Page:221-224
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Josquin W. J. M. J.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578008209214

Reference10 articles.

1. Enhanced oxidation on ion-implanted silicon

2. Thermal Oxidation of Silicon after Ion Implantation

3. Mezey, G., Nagy, T., Gyulai, J., Kotai, E., Manuaba, A., Lohner, T. and Mayer, J. W. Proc. 5th Int. Conf. Ion Implantation Semicond. Edited by: Chernow, F., Borders, J. A. and Brice, D. K. pp.49New York-London: Plenum Press.

4. Rutherford Backscattering Analysis of Ion‐Implanted, Thermally Oxidized Silicon

5. Nomura, K., Hirose, Y., Akasaka, Y., Horie, K. and Kawazu, S. Proc. 4th Int. Conf. Ion Implantation Semicond. Edited by: Namba, S. pp.681New York-London: Plenum Press.

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