Theoretical and empirical distributions for ion implantation profiles in InP
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578208225739
Reference13 articles.
1. Concentration profiles of boron implantations in amorphous and polycrystalline silicon
2. Estimation of impurity profiles in ion‐implanted amorphous targets using joined half‐Gaussian distributions
3. 2nd ed.;Gibbons J. F.,1975
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Implantation Range Statistics in III–V Materials;Journal of The Electrochemical Society;1991-03-01
2. Iron redistribution and compensation mechanisms in semi‐insulating Si‐implanted InP;Journal of Applied Physics;1989-02
3. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
4. Comparison of calculated depth distributions of implanted ions for genuine and Ge-substituted InP targets;Philosophical Magazine A;1986-03
5. Implantation of dopants into indium phosphide;Journal of Applied Physics;1985-03
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