Depth profile studies of extended defects induced by ion implantation in Si and Al
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578008243072
Reference8 articles.
1. Dechanneling by dislocations in ion-implanted Al
2. Rimini, E., Campisano, S. U., Foti, G., Baeri, P. and Picraux, S. T. 1976.Ion Beam Surface Layer Analysis, Edited by: Meyer, O., Linker, G. and Kappeler, F. Vol. II, 597New York: Plenum.
3. Dechanneling by stacking faults and dislocations
4. Thomas, G. J. and Picraux, S. T. 1974. “Applications of Ion Beams to Metals”. Edited by: Picraux, S. T., EerNisse, E. P. and Vook, F. L. 257New York: Plenum.
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