Studies on the lattice position of boron in silicon†-Reference-Cited by-同舟云学术

Studies on the lattice position of boron in silicon†

Published:1983-01 Issue:1-2 Volume:77 Page:11-33
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Fink D.,Biersack J. P.,Carstanjen H. D.,Jahnel F.,Muller K.,Ryssel H.,Osei A.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578308224719

Reference31 articles.

1. Akasaka, Y. and Horie, K. 1972.Reports on Progress in Channeling Studies in Japan, Research Group of Channeling in Japan, Secretary N. Itoh, 73Nagoya Univ.J. Appl. Phys.44, 7 (1973) 3372; andIon Implantation in Semiconductors and other Materials, B. L. Crowder (Ed.) (Plenum Press, New York 1973), p. 147

2. CHANNELING STUDY OF BORON‐IMPLANTED SILICON

3. Channeling studies of ion-implanted silicon

4. THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of neutron depth profiling at CMRR;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2015-07

2. Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals;Journal of Crystal Growth;1997-10

3. Near-surface profiling of semiconductor materials using neutron depth profiling;Semiconductor Science and Technology;1995-11-01

4. Hydrogen implantation and diffusion in silicon and silicon dioxide;Applied Physics A Materials Science & Processing;1995-10

5. On the difference in damage distributions of N+single ion and N+2molecular ion irradiation of silicon at high doses;Radiation Effects and Defects in Solids;1995-07