Electrical and back-scattering studies of thermally annealed gallium implanted silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578208222824
Reference16 articles.
1. Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon
2. Depth distribution of gallium ions implanted into silicon crystals
3. Anomalous migration of ion‐implanted Al in Si
4. Gallium distribution and electrical activation in Ga+-implanted Si
5. Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
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1. The Doping of Si p‐Field‐Effect Transistor Devices by Gallium Focused Ion Beam Implantation Enabling Flexible Fabrication Routes at Moderate Temperatures;physica status solidi (a);2020-12-02
2. Lattice strain from substitutional Ga and from holes in heavily doped Si:Ga;Physical Review B;1992-02-15
3. Photoresponse of ion implanted gallium dopants in silicon;Infrared Physics;1989-01
4. Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing;Applied Physics Letters;1987-09-28
5. The influence of foreigen atoms on the epitaxial annealing of ion-implanted silicon;Physica Status Solidi (a);1984-03-16
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