Behavior of oxygen and nitrogen upon simultaneous substoichiometric implantation into silicon

Author:

Borun A. F.,Danilin A. B.,Mordkovich V. N.,Temper E. M.

Publisher

Informa UK Limited

Subject

General Engineering

Reference9 articles.

1. Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO2and Si3N4Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon

2. The application of nitrogen ion implantation in silicon technology

3. Deryagin, B. V. 1986. “Teoriya ustoichivosti kolloidov i tonkhihplyonok”. 122Moscow: Nauka.

4. Danilin, A. B. and Temper, E. M. 1987.Ionno-luchevaya modiflkatsiya materialov, 109Chernogolovka.

5. Chemical bonding of polyatomic-ion implants in Si

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