Influence of chemical etching on metal contacts to II-VI compounds: CdTe and ZnSe-Reference-Cited by-同舟云学术

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Influence of chemical etching on metal contacts to II-VI compounds: CdTe and ZnSe

Published:1994-05 Issue:5 Volume:76 Page:961-967
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

DHARMADASA I. M.,BLOMFIELD C. J.,GREGORY G. E.,YOUNG J.

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00207219408926005

Reference6 articles.

1. Aging effects and Auger depth profiling studies of Sb/n-CdTe contacts

2. Effects of surface treatments on Schottky barrier formation at metal/n‐type CdTe contacts

3. Blue‐green laser diodes

4. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. II–VI Semiconductor-Based Conductometric Gas Sensors: Is There a Future for These Sensors?;Sensors;2024-06-14

2. II-VI Wide-Bandgap Semiconductor Device Technology: Schottky Barrier, Ohmic Contacts, and Heterostructures;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

3. II-VI Wide-Bandgap Semiconductor Device Technology: Deposition, Doping, and Etchig;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

4. Wet-etching characteristics of Ge/sub 2/Sb/sub 2/Te/sub 5/ thin films for phase-change memory;IEEE Transactions on Magnetics;2005-02

5. Electrical properties at p-ZnSe/metal interfaces;Journal of Electronic Materials;1998-08

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