Numerical modelling and characterization of high-frequency high-power high-temperature GaN/SiC heterostructure bipolar transistors
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/002072197135733
Reference10 articles.
1. CHANG, S. S., PANKOVE, J. I., LEKSONO, M. and VAN ZEGHBROECK, B. 500°C Operation of a GaN/SiC Heterojunction Bipolar Transistor. IEEE Device Research Conference. Charlottsville, Virginia, U.S.A.
2. Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface
3. Monte Carlo calculations of the temperature‐ and field‐dependent electron transport parameters for 4H‐SiC
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