Saturation current induced effects on the microwave and millimetre wave performance of GaAs double drift region IMPATTs-Reference-Cited by-同舟云学术

Saturation current induced effects on the microwave and millimetre wave performance of GaAs double drift region IMPATTs

Published:1991-08 Issue:2 Volume:71 Page:227-237
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

MAZUMDER N.,ROY S. K.

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00207219108925471

Reference14 articles.

1. BANERJEE , J. P. , 1984 , Some studies on the d.c. and high frequency properties of Indium Phosphide and Gallium Arsenide IMPATT devices . Ph.D. thesis , University of Calcutta .

2. Comprehensive models for the analysis of high-efficiency GaAs IMPATT's

3. Optical injection locking of impatt oscillators

4. Comparison of Indirect Optical Injection-Locking Techniques of Multiple X-Band Oscillators

5. Influence of carrier diffusion on the intrinsic response time of semiconductor avalanches

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4. Temperature dependence of microwave resistances of n++np++ Si X band IMPATT diode;Current Applied Physics;2007-03

5. Epitaxial layer induced series resistance and microwave properties of N+NP+ Si X band impatt diodes;Microelectronics Journal;2006-08