Epitaxial layer induced series resistance and microwave properties of N+NP+ Si X band impatt diodes-Reference-Cited by-同舟云学术

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Epitaxial layer induced series resistance and microwave properties of N+NP+ Si X band impatt diodes

Published:2006-08 Issue:8 Volume:37 Page:786-791
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

De P.

Publisher

Elsevier BV

Subject

General Engineering

Reference22 articles.

1. A small-signal theory of avalanche noise in IMPATT diodes

2. A study of the electrical series resistance of silicon IMPATT diodes

3. Physical understanding and optimum design of high-power millimeter-wave pulsed IMPATT diodes

4. Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters

5. High-power generation in IMPATT devices in the 100-200-GHz range

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of temperature and illumination on the electrical properties of p-ZnTe/n-CdTe heterojunction grown by molecular beam epitaxy;Journal of Physics D: Applied Physics;2010-05-13

2. Temperature dependence of microwave resistances of n++np++ Si X band IMPATT diode;Current Applied Physics;2007-03

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