1. BAYOUMY , H. , EL-HENNAWY , A. , and SALEH , N. , 1987 , Effect of latch-up phenomena and surface recombination on threshold voltage instability .12th International Congress for SCSSDR, Cairo , Egypt .
2. A high-performance 0.25- mu m CMOS technology. I. Design and characterization
3. A high-performance 0.25- mu m CMOS technology. II. Technology
4. EL-HENNAWY , A. , BOREL , J. , and BAYLAC , B. , 1982 , Measurement and modeling of the hot-carrier substrate current in MOSFET VLSI .ESSDERC 82, Europhysics Conference, Munich , Germany .