Energy dependence of anisotropy of defect production in electron irradiated diamond-type crystals

Author:

Haddad I. N.12,Banbury P. C.2

Affiliation:

1. a Physics Department, Faculty of Science , The University , Damascus , Syria

2. b J. J. Thomson Physical Laboratory , University of Reading , Reading, England

Publisher

Informa UK Limited

Reference25 articles.

1. Energy dependence of anisotropy of defect production in electron irradiated diamond‐type crystals

2. Carter , J. R. and Downing , R. G. 1965. Redendo Beach, California: TRW Space Technology Laboratories. Report No. 4161–6012-Ru-000 Contract NA S5, 3805 (4 May 1965)

3. Production of Divacancies and Vacancies by Electron Irradiation of Silicon

4. Downing , R. G. Carter , J. R. and Denney , J. M. 1964. Redendo Beach, California: TRW Space Technology Laboratories. Report No. 4161–6004-KV-000, Contract NA S5–3805 (3 September 1964)

5. Anisotropy of defect formation in radiated silicon

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4. A diffusion model of Frenkel defects formation during high-energy particle passage in crystals;International Journal of Radiation Applications and Instrumentation. Part C. Radiation Physics and Chemistry;1991-01

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