Anisotropy of defect formation in radiated silicon-Reference-Cited by-同舟云学术

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Anisotropy of defect formation in radiated silicon

Published:1965-06 Issue:3 Volume:16 Page:216-217
ISSN:0031-9163
Container-title:Physics Letters
language:en
Short-container-title:Physics Letters

Author:

Fang P.H.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference6 articles.

1. Symp. on Radiation damage;George,1965

2. Symp. on Radiation damage;Fang,1965

3. On the Nature of Radiation Damage in Metals

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2. Recent applications of semiconductor techniques in the study of nuclear radiations;Reports on Progress in Physics;1967-01-01

3. Type II Superconductors;Advances in Electronics and Electron Physics Volume 23;1967

4. Kinetics of complex defect annealing in silicon;Physics Letters;1966-10

5. Energy dependence of anisotropy of defect production in electron irradiated diamond-type crystals;The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics;1966-09

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