Characterization of annealing of Co-60 gamma-ray damage inN-channel power MOSFETs-Reference-Cited by-同舟云学术

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Characterization of annealing of Co-60 gamma-ray damage inN-channel power MOSFETs

Published:1998-01 Issue:3 Volume:143 Page:247-254
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Bendada E.,Raïs K.,Mialhe P.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420159808212964

Reference22 articles.

1. Radiation‐induced mobility degradation inp‐channel double‐diffused metal‐oxide‐semiconductor power transistors at 300 and 77 K

2. Radiation effects on ion-implanted silicon-dioxide films

3. Diode parameter determination as applied to mosfets for radiation effects characterization

4. A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics

5. Ouisse, T., Ghibaudo, G., Brini, J., Cristoloveanu, S. and Borel, G. RADECS 91 Int. Conf. Sept.9–121991. New York: IEEE.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot carrier stressing damage in N-channel HEXFETs;Radiation Effects and Defects in Solids;1998-09

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