Morphology of single Shockley-type stacking faults generated by recombination enhanced dislocation glide in 4H–SiC
Author:
Affiliation:
1. Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Tokyo Japan
2. International Center for Materials Nano-Architectonics, National Institute for Materials Science, Tsukuba, Japan
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
https://www.tandfonline.com/doi/pdf/10.1080/14786435.2017.1418540
Reference36 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Material science and device physics in SiC technology for high-voltage power devices
3. Dislocation evolution in 4H-SiC epitaxial layers
4. Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes
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1. Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective;Japanese Journal of Applied Physics;2024-01-15
2. Effect of basal plane dislocation structures on single Shockley-type stacking fault expansion rate in 4H-SiC;Japanese Journal of Applied Physics;2024-01-04
3. Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers;Journal of Electronic Materials;2023-03-29
4. Partial dislocation structures at expansion terminating areas of bar-shaped single Shockley-type stacking faults and basal plane dislocations at the origin in 4H-SiC;Japanese Journal of Applied Physics;2022-11-24
5. Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers;Journal of Electronic Materials;2022-10-31
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