Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films-Reference-Cited by-同舟云学术

Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films

Published:2000-04 Issue:4 Volume:80 Page:475-486
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

águas H.,Silva V.¹,Ferreira I.¹,Fortunato E.¹,Martins R.¹

Affiliation:

1. a Departamento de Ciěncia dos Materiais da Faculdade de Ciěncias e Tecnologia and Centro de Excelěncia de Microelectrónica e Optoelectrónica de Processos , Universidade Nova de Lisboa, Quinta da Torre , 2825-114 , Caparica , Portugal

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642810008209755

Reference10 articles.

1. Thin Film Position Sensitive Detectors Based on a-Si:H Devices

2. Structural interpretation of the vibrational spectra ofa-Si: H alloys

3. Influence of microstructure on the photoconductivity of glow discharge deposited amorphous SiC:H and amorphous SiGe:H alloys

4. Role of the deposition parameters in the uniformity of films produced by the plasma-enhanced chemical vapour deposition technique

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5. Effect of the discharge frequency and impedance on the structural properties of polymorphous silicon;Thin Solid Films;2004-03