Light-induced creation of metastable defects in hydrogenated amorphous silicon carbide-Reference-Cited by-同舟云学术

Light-induced creation of metastable defects in hydrogenated amorphous silicon carbide

Published:2001-06 Issue:6 Volume:81 Page:629-636
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Reitano R.¹²,Baeri A.¹,Foti G.¹

Affiliation:

1. a Dipartimento di Fisica, Università di Catania and Istituto Nazionale per la Fisica della Materia , UdR Catania, Corso Italia 57, 1-95129 , Catania , Italy

2. b E-mail:

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642810108225456

Reference12 articles.

1. Electronic and optical properties of glow-discharge amorphous silicon-carbon alloys

2. Ion-beam processing of hydrogenated amorphous silicon carbide grown by plasma-enhanced chemical vapour deposition

3. Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect

4. Hydrogenated Amorphous Silicon Based Alloy: a-Si_1-xC_x:H

5. Kinetics of light induced metastable defect creation in amorphous silicon: A dispersive excitonic model for the weak bond‐dangling bond conversion

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1. Analysis of the physical and photoelectrochemical properties of c-Si(p)/a-SiC:H(p) photocathodes for solar water splitting;Journal of Physics D: Applied Physics;2021-02-23

2. Paramagnetic Defects and Photoluminescence in Carbon Rich a-SiC:H Films: Role of Hydrogen and Excess of Carbon;MRS Proceedings;2007

3. Light-Intensity Dependence of Photocreated Defects in Hydrogenated Amorphous Silicon-Nitrogen Alloy Films;Japanese Journal of Applied Physics;2003-03-01

4. Particle and light-induced luminescence degradation in a-SiC:H;Applied Surface Science;2001-12

5. Silicon carbide: from amorphous to crystalline material;Applied Surface Science;2001-12