Atomic structure and core composition of partial dislocations and dislocation fronts in β-SiC by high-resolution transmission electron microscopy
Author:
Affiliation:
1. a Laboratoire TECSEN , Faculté des Sciences et Techniques de Saint Jérome , 13397 , Marseille Cedex , 20 , France
2. b Physique Cristalline , Institut des Matériaux Jean Rouxel , BP 32 229, 44 322 , Nantes Cedex , 3 , France
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642810108223108
Reference34 articles.
1. Quantification of high-resolution electron microscope images of amorphous carbon
2. Bressiani , A. H. A. 1984. Germany: Stuttgart University. PhD Thesis
3. High-resolution transmission electron microscopy of 60[ddot] dislocations in si-GaAs
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