Analysis of a micro pressure-sensor employing SiC-AlN-SiC structure
Author:
Affiliation:
1. School of Physics and Electronics, Henan University, Kaifeng, China
Publisher
Informa UK Limited
Subject
Mechanical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/14484846.2019.1704490
Reference12 articles.
1. A Fully Electrically Isolated Package for High Temperature SiC Sensors
2. A silicon carbide capacitive pressure sensor for in-cylinder pressure measurement
3. Design of laser micromachined single crystal 6H–SiC diaphragms for high-temperature micro-electro-mechanical-system pressure sensors
4. A review of silicon carbide development in MEMS applications
5. A simple analysis to improve linearity of touch mode capacitive pressure sensor by modifying shape of fixed electrode
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Application of bulk silicon carbide technology in high temperature MEMS sensors;Materials Science in Semiconductor Processing;2024-04
2. Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test;Micromachines;2023-02-28
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