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A double-line image of a dislocation in a silicon single crystal observed by X-ray plane wave topography

  • Published:1981-04 Issue:4 Volume:43 Page:935-944
  • ISSN:0141-8610
  • Container-title:Philosophical Magazine A
  • language:en
  • Short-container-title:Philosophical Magazine A

Author:

Ishida Kohtaro,Ootuka Akio,Takagi Satio

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Asymmetric topography of silicon in Laue and Bragg geometries at the SRS;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1987-11

2. X-Ray Topography Examination of Lattice Distortions in LEC-Grown GaAs Single Crystals;Japanese Journal of Applied Physics;1985-12-20

3. A study of the contrast on growth striations in silicon by X-ray double crystal topography in the Laue case;Czechoslovak Journal of Physics;1985-09

4. On the margin effect in section patterns obtained by plane-wave X-ray topography;Philosophical Magazine A;1984-07

5. Plane-wave X-ray images of dislocations parallel to the diffraction vector;Physica Status Solidi (a);1984-05-16
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