Alloying at ZnS/ZnO Heterointerface Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Alloying at ZnS/ZnO Heterointerface Grown by Molecular Beam Epitaxy

Published:2005 Issue:3 Volume:48 Page:127-129
ISSN:0559-8516
Container-title:Shinku
language:
Short-container-title:J. Vac. Soc. Jpn.

Author:

KOIKE Kazuto,TAKADA Gen-you,HAMA Kenji,HAMA Takuma,OCHI Hi-izu,OGATA Ken-ichi,SASA Shigehiko,INOUE Masataka,YANO Mitsuaki

Publisher

The Vacuum Society of Japan

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics

Reference12 articles.

1. Single-Crystalline Epitaxial ZnS Waveguides for Phase Matched Second Harmonic Generation Devices

2. S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method

3. Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs

4. Temperature dependence of the GaNxP1−x band gap and effect of band crossover

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