45 nm node back end of the line yield evaluation on ultrahigh density interconnect structures using electron beam direct write lithography-Reference-Cited by-同舟云学术

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45 nm node back end of the line yield evaluation on ultrahigh density interconnect structures using electron beam direct write lithography

Published:2007 Issue:1 Volume:25 Page:124
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Icard Beatrice,Pain Laurent,Arnal V.,Manakli Serdar,Le-Denmat Jean-Christophe,Brun P.,Vincent Maxime,Soonkindt Christophe,Minghetti Blandine,Matsumiya Tasuku

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Real-time dose control for electron-beam lithography;Nanotechnology;2020-12-08

2. Electron Beam Lithography;Lithography;2013-03-07

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