Sharp GaN nanowires used as field emitter on active cantilevers for scanning probe lithography-Reference-Cited by-同舟云学术

Sharp GaN nanowires used as field emitter on active cantilevers for scanning probe lithography

Published:2018-11 Issue:6 Volume:36 Page:06JL04
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Lenk Claudia¹,Hofmann Martin¹,Ivanov Tzvetan¹,Ahmad Ahmad¹,Lenk Steve¹,Rangelow Ivo W.¹,Reum Alexander²,Reuter Christoph²,Holz Mathias²,Behzadirad Mahmoud³,Rishinaramangalam Ashwin K.³,Feezell Daniel³,Busani Tito³

Affiliation:

1. Department of Micro- and Nanoelectronic Systems, Technische Universität Ilmenau, Gustav-Kirchhoff-Straße 1, 98693 Ilmenau, Germany

2. nano analytik GmbH, Ehrenbergstr. 1, 98693 Ilmenau, Germany

3. Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5048190

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