Al[sub 2]O[sub 3]–SiO[sub 2] stack with enhanced reliability-Reference-Cited by-同舟云学术

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Al[sub 2]O[sub 3]–SiO[sub 2] stack with enhanced reliability

Published:2009 Issue:1 Volume:27 Page:476
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lisiansky M.,Fenigstein A.,Heiman A.,Raskin Y.,Roizin Y.,Bartholomew L.,Owyang J.,Gladkikh A.,Brener R.,Geppert I.,Lyakin E.,Meyler B.,Shnieder Y.,Yofis S.,Eizenberg M.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of Carrier Lifetime in Silicon Using an Ultra-thin Al2O3/SiO2 Dielectric Stack;2021 IEEE Latin America Electron Devices Conference (LAEDC);2021-04-19

2. Antibacterial efficiency of cellulose-based fibers covered with ZnO and Al2O3 by Atomic Layer Deposition;Applied Surface Science;2019-07

3. Peculiarities of hole trapping in Al 2 O 3 -SiO 2 gate dielectric stack;Microelectronics Reliability;2017-12

4. Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories;IEEE Transactions on Device and Materials Reliability;2017-03

5. Nitrogen induced modifications of MANOS memory properties;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12

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