Surface Fermi level engineering: Or there is more to Schottky barriers than just making diodes and field effect transistor gates-Reference-Cited by-同舟云学术

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Surface Fermi level engineering: Or there is more to Schottky barriers than just making diodes and field effect transistor gates

Published:1991-07 Issue:4 Volume:9 Page:2355
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Freeouf J. L.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface;Applied Surface Science;2017-02

2. Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors;Applied Surface Science;1997-06

3. Schottky barriers and their properties in superionic crystals;Physical Review B;1994-07-15

4. Polar Ligand Adsorption Controls Semiconductor Surface Potentials;Journal of the American Chemical Society;1994-04

5. The Effects of Interfacial Reactions in the Formation of Ohmic Contacts to GaAs;MRS Proceedings;1994

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