Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators-Reference-Cited by-同舟云学术

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Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators

Published:2003 Issue:4 Volume:21 Page:1306
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

San Andrés E.,del Prado A.,Mártil I.,González-Dı́az G.,Martı́nez F. L.

Publisher

American Vacuum Society

Subject

General Engineering

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