Surface and interface states for GaAs(100) (1×1) and (4×2)‐c(8×2) reconstructions-Reference-Cited by-同舟云学术

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Surface and interface states for GaAs(100) (1×1) and (4×2)‐c(8×2) reconstructions

Published:1992-07 Issue:4 Volume:10 Page:749-753
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Vitomirov I. M.,Raisanen A. D.,Finnefrock A. C.,Viturro R. E.,Chang S.,Brillson L. J.,Kirchner P. D.,Pettit G. D.,Woodall J. M.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.578157

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Applications of depth-resolved cathodoluminescence spectroscopy;Journal of Physics D: Applied Physics;2012-04-12

2. Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation;Physica B: Condensed Matter;2009-12

3. An ab initio cluster study of chemisorption of atomic Cs on Ga-rich GaAs (100) (2×1), (2×2), and β(4×2) surfaces;The Journal of Chemical Physics;1999-11-08

4. Dislocation-Induced deep level states in In0.08Ga0.92As/GaAs heterostructures;Journal of Electronic Materials;1994-09

5. Strain relaxation induced deep levels in In1−xGaxAs thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07

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