Atomic layer etching of Si3N4 with high selectivity to SiO2 and poly-Si-Reference-Cited by-同舟云学术

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Atomic layer etching of Si3N4 with high selectivity to SiO2 and poly-Si

Published:2021-09 Issue:5 Volume:39 Page:052601
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Miyoshi Nobuya¹^ORCID,Shinoda Kazunori²,Kobayashi Hiroyuki¹,Kurihara Masaru²,Kouzuma Yutaka³,Izawa Masaru⁴

Affiliation:

1. Hitachi High-Tech America, Inc., 6357 NE Evergreen Parkway, Building D, Hillsboro, Oregon 97124

2. Center for Technology Innovation-Instrumentation, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan

3. Nano-Technology Solution Business Group, Hitachi High-Tech Corp., 794 Higashitoyoi, Kudamatsu-shi, Yamaguchi 744-0002, Japan

4. Nano-Technology Solution Business Group, Hitachi High-Tech Corp., 1-17-1 Toranomon, Minato-ku, Tokyo 105-6409, Japan

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0001179

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer etching of SiCO films with surface modification by O2 and CF4/NH3/Ar plasmas and desorption by IR annealing;Journal of Vacuum Science & Technology A;2024-06-07

2. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology;Nanomaterials;2024-05-09

3. Improving SiO2 to SiNx etch selectivity during atomic layer etching with multiple selective organic pre-functionalization steps;Journal of Vacuum Science & Technology A;2024-04-26

4. In Situ Monitoring of Etching Characteristic and Surface Reactions in Atomic Layer Etching of SiN Using Cyclic CF₄/H₂ and H₂ Plasmas;ACS Applied Materials & Interfaces;2023-07-13

5. Real-time monitoring of atomic layer etching in Cl2/Ar pulsed gas, pulsed power plasmas by optical emission spectroscopy;Journal of Vacuum Science & Technology A;2023-04-27

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