Ionization probability of sputtered indium atoms under impact of slow highly charged ions-Reference-Cited by-同舟云学术

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Ionization probability of sputtered indium atoms under impact of slow highly charged ions

Published:2020-07 Issue:4 Volume:38 Page:044003
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Herder Matthias¹,Ernst Philipp¹,Skopinski Lucia¹,Weidtmann Boris¹,Schleberger Marika¹,Wucher Andreas¹

Affiliation:

1. Fakultät für Physik, Universität Duisburg-Essen, 47048 Duisburg, Germany

Funder

German Ministry of Science

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/6.0000171

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Path to ion-based pump-probe experiments: Generation of 18 picosecond keV Ne+ ion pulses from a cooled supersonic gas beam;Physical Review Research;2023-08-16

2. The charge exchange of slow highly charged ions at surfaces unraveled with freestanding 2D materials;Surface Science Reports;2022-11

3. MeV TOF SIMS Analysis of Hybrid Organic/Inorganic Compounds in the Low Energy Region;Journal of the American Society for Mass Spectrometry;2021-02-22

4. Time-of-flight mass spectrometry of particle emission during irradiation with slow, highly charged ions;Review of Scientific Instruments;2021-02-01

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