Surface chemical state populations in the molecular beam epitaxy deposition of BaF2 on GaAs by x‐ray photoelectron spectroscopy and heavy‐ion backscattering spectroscopy
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.579882
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Work function and negative electron affinity of ultrathin barium fluoride films;Surface and Interface Analysis;2020-07
2. Formation of a Ba-Te Surface on GaAs;MRS Proceedings;2003
3. Heavy ion backscattering spectroscopy (HIBS) analysis of gallium arsenide diffusion into barium fluoride layers grown by molecular beam epitaxy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-01
4. An inexpensive, low-energy, ionized gas source for molecular beam epitaxy applications;Review of Scientific Instruments;1997-12
5. Deposition of GaAs (111) epilayers on BaF2 (111)/Si (100) heterostructures by molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-09
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