Deposition of GaAs (111) epilayers on BaF2 (111)/Si (100) heterostructures by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Deposition of GaAs (111) epilayers on BaF2 (111)/Si (100) heterostructures by molecular beam epitaxy

Published:1997-09 Issue:5 Volume:15 Page:2473-2477
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Stumborg M. F.,Santiago F.,Chu T. K.,Boulais K. A.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580912

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CrO2 (100) and TiO2 (100) film heteroepitaxy on a BaF2 (111)/Si (100) substrate;Journal of Crystal Growth;2006-05

2. Heteroepitaxial growth of tungsten oxide films on silicon(100) using a BaF2 buffer layer;Journal of Materials Research;2003-12

3. Heavy ion backscattering spectroscopy (HIBS) analysis of gallium arsenide diffusion into barium fluoride layers grown by molecular beam epitaxy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-01

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