Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms
Author:
Affiliation:
1. Princeton Plasma Physics Laboratory, Princeton, New Jersey 08540
2. Department of Chemical and Biological Engineering, Princeton University, Princeton, New Jersey 08540
Abstract
Funder
US Department of Energy OFES
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://avs.scitation.org/doi/pdf/10.1116/6.0002027
Reference40 articles.
1. Self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and Ar+ion irradiation
2. Mechanism of cleaning and etching Si surfaces with low energy chlorine ion bombardment
3. Substrate orientation dependence of self-limited atomic-layer etching of Si with chlorine adsorption and low-energy Ar+ irradiation
4. Realization of atomic layer etching of silicon
5. Layer-by-layer etching of Cl-adsorbed silicon surfaces by low energy Ar+ ion irradiation
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1. Dynamics of plasma atomic layer etching: Molecular dynamics simulations and optical emission spectroscopy;Journal of Vacuum Science & Technology A;2023-11-13
2. Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study;Journal of Vacuum Science & Technology A;2023-08-29
3. Near-surface damage and mixing in Si-Cl2-Ar atomic layer etching processes: Insights from molecular dynamics simulations;Journal of Vacuum Science & Technology A;2023-06-15
4. Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method;Japanese Journal of Applied Physics;2023-03-27
5. Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms;Journal of Vacuum Science & Technology A;2022-12
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