Etch residue removal of CoFeB using CO/NH3 reactive ion beam for spin transfer torque-magnetic random access memory device-Reference-Cited by-同舟云学术

Etch residue removal of CoFeB using CO/NH3 reactive ion beam for spin transfer torque-magnetic random access memory device

Published:2015-11 Issue:6 Volume:33 Page:061212
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Jeon Min Hwan,Yang Kyung Chae,Park Jin Woo,Yun Deok Hyun,Kim Kyong Nam,Yeom Geun Young

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4936114

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