Study of 193nm photoresist degradation during short time fluorocarbon plasma exposure III. Effect of fluorocarbon film and initial surface condition on photoresist degradation-Reference-Cited by-同舟云学术

Study of 193nm photoresist degradation during short time fluorocarbon plasma exposure III. Effect of fluorocarbon film and initial surface condition on photoresist degradation

Published:2008-11 Issue:6 Volume:26 Page:1978-1986
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Sumiya M.¹,Bruce R.²,Engelmann S.²,Weilnboeck F.²,Oehrlein G. S.²

Affiliation:

1. Research and Development Division, Hitachi High-Technologies Corporation, 794 Higashitoyoi, Kudamatsu, Yamaguchi 744-0002, Japan

2. Department of Material Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742

Funder

NSF

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

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