Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone-Reference-Cited by-同舟云学术

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Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone

Published:2012-01 Issue:1 Volume:30 Page:01A126
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Won Seok-Jun,Jung Hyung-Suk,Suh Sungin,Jin Choi Yu,Lee Nae-In,Seong Hwang Cheol,Joon Kim Hyeong

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3664122

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-temperature atomic layer deposition of silicon oxide films using Tris(dimethylamino)silane and ozone;Ceramics International;2024-08

2. Controlled photocatalytic activity of TiO2 inverse opal structures with atomic layer deposited (ALD) metal oxide thin films;Materials Chemistry and Physics;2022-02

3. Atomic layer deposition of silicon oxide films using bis(dimethylaminomethylsilyl)trimethylsilylamine and ozone: first-principles and experimental study;Journal of Materials Chemistry C;2022

4. Effect of deposition temperature and surface reactions in atomic layer deposition of silicon oxide using Bis(diethylamino)silane and ozone;Applied Surface Science;2022-01

5. Atomic layer chemical vapor deposition of SiO2 thin films using a chlorine-free silicon precursor for 3D NAND applications;Ceramics International;2021-07

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