Influence of photoelectrons on the exposure of resists by x rays
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.569724
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Resist profile characteristics caused by photoelectron and Auger electron blur at the resist–tungsten substrate interface in 100 nm proximity x-ray lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
2. Direct measurement of the effect of substrate photoelectrons in x-ray nanolithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11
3. Radiation Exposure;Semiconductor Lithography;1988
4. X-ray sources for microlithography created by laser radiation at λ=0.26 μm;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1987-01
5. Monte Carlo Methods and Microlithography Simulation for Electron and X-Ray Beams;Advances in Electronics and Electron Physics Volume 69;1987
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