Growth and characterization of InAs quantum dots on InP nanowires with zinc blende structure-Reference-Cited by-同舟云学术

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Growth and characterization of InAs quantum dots on InP nanowires with zinc blende structure

Published:2013-09 Issue:5 Volume:31 Page:051803
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Yan Xin,Zhang Xia,Li Junshuai,Cui Jiangong,Wang Sijia,Fan Shuyu,Huang Yongqing,Ren Xiaomin

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4818509

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Type-I Core–Shell ZnSe/ZnS Quantum Dot-Based Resistive Switching for Implementing Algorithm;Nano Letters;2020-06-24

2. Fabrication and optical properties of type-II InP/InAs nanowire/quantum-dot heterostructures;physica status solidi (RRL) - Rapid Research Letters;2015-11-26

3. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires;Journal of Applied Physics;2014-12-07

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