Effects of a Ni cap layer on transparent Ni/Au ohmic contacts to p-GaN
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaN;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
2. Photogated transistor of III-nitride nanorods;Applied Physics Letters;2010-03-08
3. Temperature Effect on the Optoelectronic Properties of GaN-based Light-Emitting Diodes with ITO p-Contacts;Journal of The Electrochemical Society;2007
4. NITRIDE BASED SCHOTTKY-BARRIER PHOTOVOLTAIC DEVICES;MRS Proceedings;2007
5. Calculations and measurements of contact resistance of semi-transparent Ni/Pd contacts to p-GaN;Journal of Electronic Materials;2006-04
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