Selective epitaxial growth of Si[sub 1−x]Ge[sub x]/Si strained-layers in a tubular hot-wall low pressure chemical vapor deposition system-Reference-Cited by-同舟云学术

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Selective epitaxial growth of Si[sub 1−x]Ge[sub x]/Si strained-layers in a tubular hot-wall low pressure chemical vapor deposition system

Published:1997-01 Issue:1 Volume:15 Page:138
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Wang Wei-Chung

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research and Development of Antischistosomal Drugs in the People's Republic of China;Important Helminth Infections in Southeast Asia: Diversity and Potential for Control and Elimination, Part B;2010

2. Formation of SiGe Heterostructures and Their Properties;Springer Handbook of Crystal Growth;2010

3. Fabrication technology of SiGe hetero-structures and their properties;Surface Science Reports;2005-11

4. Selective epitaxial growth of Si and SiGe for metal oxide semiconductor transistors;Journal of Crystal Growth;2003-12

5. Effects of temperature and HCl flow on the SiGe growth kinetics in reduced pressure–chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003

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