Fabrication of 150-nm gate-length high electron mobility transistors using x-ray lithography
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Published:1994-11
Issue:6
Volume:12
Page:3970
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Haghiri-Gosnet A. M.
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
3 articles.
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