Characteristics of GaAs/AlGaAs HEMT's fabricated by X-ray lithography-Reference-Cited by-同舟云学术

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Characteristics of GaAs/AlGaAs HEMT's fabricated by X-ray lithography

Published:1996 Issue:1 Volume:43 Page:175-178
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lafontaine H.,Haghiri-Gosnet A.M.,Jin Y.,Crozat P.,Adde R.,Chaker M.,Pepin H.,Rousseaux F.,Launois H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/10174/00477612.pdf?arnumber=477612

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub-micron T-gate AlGaNGaN HEMTs Using Diluted ZEP520A;2024 Photonics & Electromagnetics Research Symposium (PIERS);2024-04-21

2. Nanofabrications of T shape gates for high electron mobility transistors in microwaves and THz waves, a review;Micro and Nano Engineering;2021-11

3. Recent Advances in Plasmonic Nanolithography;Nanoscience and Nanotechnology Letters;2018-01-01

4. Magnetic evidence for solid-state solubility-limited dissolution of Ni into AuGe in alloyed AuGe/Ni/Au Ohmic contacts to GaAs;Journal of Applied Physics;2012-08-15

5. InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer;The European Physical Journal Applied Physics;2009-10-02

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