Low pressure chemical vapor deposition of silicon dioxide below 500 °C by the pyrolysis of diethylsilane in oxygen

Author:

Patterson James D.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Enhancement of mechanical properties of organosilicon thin films deposited from diethylsilane;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-05

2. Thin-Film Deposition Materials;Handbook of Chemicals and Gases for the Semiconductor Industry;2002-07-15

3. A comparative study of plasma enhanced chemically vapor deposited SiOH and SiNCH films using the environmentally benign precursor diethylsilane;Materials Letters;2002-05

4. Numerical analysis of LPCVD of SiO2 films from diethylsilane/oxygen;Korean Journal of Chemical Engineering;1999-01

5. TEOS-based PECVD of silicon dioxide for VLSI applications;Advanced Materials for Optics and Electronics;1996-03

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