Interactive effects in reactive ion etching of W[sub 1−x]Ge[sub x]
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Published:1997-11
Issue:6
Volume:15
Page:2676
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
1 articles.
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1. High speed anisotropic dry etching of CoNbZr for next generation magnetic recording;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000