High speed anisotropic dry etching of CoNbZr for next generation magnetic recording-Reference-Cited by-同舟云学术

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High speed anisotropic dry etching of CoNbZr for next generation magnetic recording

Published:2000 Issue:6 Volume:18 Page:3462
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Andriesse M. S. P.,Zijlstra T.,van der Drift E.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-density plasma etching of cobalt thin films using C2H5OH/O2/Ar gas mixture;Materials Science and Engineering: B;2023-07

2. Cobalt subtractive etch for advanced interconnects;International Conference on Micro- and Nano-Electronics 2021;2022-01-31

3. Surface properties of ZrO2thin film under Cl2/Ar plasma using angle-resolved X-ray photoelectron spectroscopy;Japanese Journal of Applied Physics;2014-07-24

4. The Use of Inductively Coupled CF4/Ar Plasma to Improve the Etch Rate of ZrO2Thin Films;Transactions on Electrical and Electronic Materials;2013-02-25

5. A Surface Properties of ZrO2Thin Films Using Adaptively Coupled Plasma Source;Journal of The Electrochemical Society;2011

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