Amber GaNP-based light-emitting diodes directly grown on GaP(100) substrates
Author:
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A study of the physical properties of GaN, GaP and their mixed ternary alloys for the applications in optoelectronics devices;Bulletin of Materials Science;2023-03-28
2. Self-catalyzed Ga(N)AsP nanowires and GaAsP/GaNAsP core–shell nanowires grown on Si (111) by gas-source molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03
3. Solid-State Lighting: Toward Smart and Ultraefficient Materials, Devices, Lamps, and Systems;Photonics;2015-02-27
4. Origin of Strong Photoluminescence Polarization in GaNP Nanowires;Nano Letters;2014-08-29
5. Toward Smart and Ultra-efficient Solid-State Lighting;Advanced Optical Materials;2014-06-27
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