Self-catalyzed Ga(N)AsP nanowires and GaAsP/GaNAsP core–shell nanowires grown on Si (111) by gas-source molecular beam epitaxy-Reference-Cited by-同舟云学术

Self-catalyzed Ga(N)AsP nanowires and GaAsP/GaNAsP core–shell nanowires grown on Si (111) by gas-source molecular beam epitaxy

Published:2016-03 Issue:2 Volume:34 Page:02L108
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

La Rui¹,Pan Janet L.²,Bastiman Faebian³,Tu Charles W.⁴

Affiliation:

1. Graduate Program of Material Science and Engineering, University of California, San Diego, California 92093

2. Department of Electrical and Computer Engineering, University of California, San Diego, California 92093

3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

4. Graduate Program of Material Science and Engineering, University of California, San Diego, California 92093 and Department of Electrical and Computer Engineering, University of California, San Diego, California 92093

Funder

National Science Foundation (NSF)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://scitation.aip.org/deliver/fulltext/avs/journal/jvstb/34/2/1.4941133.pdf?itemId=/content/avs/journal/jvstb/34/2/10.1116/1.4941133&mimeType=pdf&containerItemId=content/avs/journal/jvstb

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