Two-dimensional electron gas formation in undoped In[sub 0.75]Ga[sub 0.25]As/In[sub 0.75]Al[sub 0.25]As quantum wells-Reference-Cited by-同舟云学术

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Two-dimensional electron gas formation in undoped In[sub 0.75]Ga[sub 0.25]As/In[sub 0.75]Al[sub 0.25]As quantum wells

Published:2004 Issue:2 Volume:22 Page:702
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Capotondi F.,Biasiol G.,Vobornik I.,Sorba L.,Giazotto F.,Cavallini A.,Fraboni B.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas;Quantum Frontiers;2024-07-26

2. Enhanced mobility of ternary InGaAs quantum wells through digital alloying;Physical Review Materials;2024-06-26

3. Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells;Nanomaterials;2024-03-27

4. Possible zero-magnetic field fractional quantization in In0.75Ga0.25As heterostructures;Applied Physics Letters;2023-10-30

5. Near-surface InAs two-dimensional electron gas on a GaAs substrate: Characterization and superconducting proximity effect;Physical Review B;2022-12-05

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